BC212B
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Краткое описание:
PNP BJT Transistor 50V 100mA TO-92
Дополнительная информация
PNP Bipolar Junction Transistor (BJT) in a TO-92 package, featuring a 50V collector-emitter voltage (VCEO) and a maximum collector current of 100mA. This through-hole component offers a minimum DC current gain (hFE) of 40 and a transition frequency of 280MHz. With a maximum power dissipation of 350mW, it operates across a wide temperature range from -55°C to 150°C. The device is lead-free and RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| hFE Min | 40 |
| Polarity | PNP |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Package/Case | TO-92-3 |
| Current Rating | -100mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | -50V |
| Package Quantity | 5000 |
| Power Dissipation | 350mW |
| Number of Elements | 1 |
| Transition Frequency | 280MHz |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Power Dissipation | 350mW |
| Gain Bandwidth Product | 280MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | -60V |
| Collector-emitter Voltage-Max | 600mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | -250mV |
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