BC32725BU

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BC32725BU - Onsemi
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Краткое описание: PNP BJT Transistor, 45V, 800mA, 100MHz, TO-92
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP Bipolar Junction Transistor (BJT) with a 45V Collector-Emitter Voltage (VCEO) and -800mA maximum collector current. Features a 100MHz gain bandwidth product and a TO-92 package for through-hole mounting. Operates across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 625mW. This RoHS compliant component offers a minimum hFE of 100 and a collector-emitter saturation voltage of -700mV.
RoHS Compliant
Mount Through Hole
Weight 0.179g
hFE Min 100
Polarity PNP
Frequency 100MHz
Lead Free Lead Free
Packaging Bulk
Package/Case TO-92
Max Frequency 100MHz
Current Rating -800mA
RoHS Compliant Yes
Contact Plating Tin, Matte
DC Rated Voltage -45V
Package Quantity 1000
Power Dissipation 625mW
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 100MHz
Max Breakdown Voltage 45V
Max Collector Current 800mA
Max Power Dissipation 625mW
Gain Bandwidth Product 100MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) -5V
Collector-emitter Voltage-Max 700mV
Collector Emitter Voltage (VCEO) 45V
Collector Emitter Breakdown Voltage 45V
Collector Emitter Saturation Voltage -700mV

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