BC547B
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NPN BJT Transistor, 45V VCEO, 100mA IC, 300MHz fT, TO-92
Дополнительная информация
NPN Epitaxial Silicon Transistor, TO-92-3 package. Features 45V Collector Emitter Voltage (VCEO), 100mA Max Collector Current, and 300MHz Transition Frequency. Offers a minimum hFE of 200 and a Max Power Dissipation of 500mW. Operates across a temperature range of -65°C to 150°C. Through-hole mount with lead-free and RoHS compliant construction.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 3.86mm |
| Height | 4.58mm |
| Length | 4.58mm |
| Weight | 0.007055oz |
| Voltage | 40V |
| hFE Min | 200 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Package/Case | TO-92-3 |
| Max Frequency | 300MHz |
| Current Rating | 100mA |
| RoHS Compliant | Yes |
| Contact Plating | Copper, Tin, Silver |
| DC Rated Voltage | 45V |
| Package Quantity | 5000 |
| Reach SVHC Compliant | No |
| Transition Frequency | 300MHz |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 100mA |
| Max Power Dissipation | 500mW |
| Gain Bandwidth Product | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 6V |
| Collector Base Voltage (VCBO) | 50V |
| Collector-emitter Voltage-Max | 600mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 300mV |
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