BC549ABU
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NPN BJT Transistor, 30V VCEO, 100mA IC, 300MHz, TO-92
Дополнительная информация
NPN silicon bipolar junction transistor in a TO-92 package. Features a 30V collector-emitter breakdown voltage (VCEO) and a 30V collector-base voltage (VCBO). Offers a continuous collector current of 100mA and a maximum power dissipation of 500mW. Exhibits a minimum DC current gain (hFE) of 110 and a transition frequency of 300MHz. Designed for through-hole mounting with a wide operating temperature range from -65°C to 150°C.
| RoHS | Compliant |
| Mount | Through Hole |
| hFE Min | 110 |
| Polarity | NPN |
| Frequency | 300MHz |
| Packaging | Bulk |
| Package/Case | TO-92 |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Power Dissipation | 500mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Transition Frequency | 300MHz |
| Max Collector Current | 100mA |
| Max Power Dissipation | 500mW |
| Gain Bandwidth Product | 300MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | 100mA |
| Collector Base Voltage (VCBO) | 30V |
| Collector-emitter Voltage-Max | 600mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 200mV |
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