BC556BTFR
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PNP BJT Transistor, 65V VCEO, 100mA IC, 150MHz fT, TO-92
Дополнительная информация
PNP Epitaxial Silicon Transistor, 2000-REEL, featuring a 65V Collector Emitter Voltage (VCEO) and -100mA Max Collector Current. This through-hole component offers a 150MHz Gain Bandwidth Product and a minimum hFE of 110. Operating across a wide temperature range from -65°C to 150°C, it boasts 500mW Max Power Dissipation and is packaged in a TO-92-3 case with tin, matte contact plating.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.19mm |
| Height | 5.33mm |
| Length | 5.2mm |
| Weight | 0.24g |
| hFE Min | 110 |
| Polarity | PNP |
| Frequency | 150MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | TO-92-3 |
| Max Frequency | 10MHz |
| Current Rating | -100mA |
| RoHS Compliant | Yes |
| Contact Plating | Tin, Matte |
| DC Rated Voltage | -65V |
| Package Quantity | 2000 |
| Power Dissipation | 500mW |
| Number of Elements | 1 |
| Transition Frequency | 150MHz |
| Max Breakdown Voltage | 65V |
| Max Collector Current | 100mA |
| Max Power Dissipation | 500mW |
| Gain Bandwidth Product | 150MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | -5V |
| Collector Base Voltage (VCBO) | -80V |
| Collector-emitter Voltage-Max | 650mV |
| Collector Emitter Voltage (VCEO) | 65V |
| Collector Emitter Breakdown Voltage | 65V |
| Collector Emitter Saturation Voltage | -250mV |
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