BC847CLT3G

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BC847CLT3G - Onsemi
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Краткое описание: NPN BJT Transistor, 45V, 100mA, 100MHz, SOT-23
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN Bipolar Junction Transistor (BJT) in a SOT-23-3 package. Features a maximum collector current of 100mA and a collector-emitter voltage (VCEO) of 45V. Offers a minimum DC current gain (hFE) of 420 and a transition frequency of 100MHz. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 300mW. This component is RoHS compliant and packaged on a 10,000-piece tape and reel.
RoHS Compliant
Width 1.4mm
Height 1.11mm
Length 3.04mm
hFE Min 420
Polarity NPN
Frequency 100MHz
Lead Free Lead Free
Packaging Tape and Reel
Halogen Free Halogen Free
Package/Case SOT-23-3
Max Frequency 100MHz
Current Rating 100mA
RoHS Compliant Yes
Contact Plating Tin, Matte
DC Rated Voltage 45V
Package Quantity 1
Power Dissipation 300mW
Number of Elements 1
Radiation Hardening No
Transition Frequency 100MHz
Max Breakdown Voltage 45V
Max Collector Current 100mA
Max Power Dissipation 300mW
Gain Bandwidth Product 100MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 6V
Collector Base Voltage (VCBO) 50V
Collector-emitter Voltage-Max 600mV
Collector Emitter Voltage (VCEO) 45V
Collector Emitter Breakdown Voltage 45V
Collector Emitter Saturation Voltage 600mV

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