BC856B-TP
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Краткое описание:
PNP BJT Transistor 65V 100mA SOT-23 200MHz
Дополнительная информация
PNP Bipolar Junction Transistor (BJT) in a SOT-23 surface mount package. Features a 65V collector-emitter breakdown voltage (VCEO) and a maximum collector current of 100mA. Operates with a 200MHz transition frequency and a 100MHz gain bandwidth product. Offers a wide operating temperature range from -55°C to 150°C with a maximum power dissipation of 310mW. This component is lead-free and RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Polarity | PNP |
| Frequency | 200MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-23 |
| Max Frequency | 200MHz |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Power Dissipation | 200mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Transition Frequency | 200MHz |
| Max Breakdown Voltage | 65V |
| Max Collector Current | 100mA |
| Max Power Dissipation | 310mW |
| Gain Bandwidth Product | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 80V |
| Collector-emitter Voltage-Max | 650mV |
| Collector Emitter Voltage (VCEO) | 65V |
| Collector Emitter Breakdown Voltage | 65V |
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