BCP5316TA
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PNP BJT Transistor, 80V, 1A, 150MHz, SOT-223, Surface Mount
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) for surface mount applications. Features 80V collector-emitter breakdown voltage (VCEO) and 1A continuous collector current (IC). Operates with a 150MHz transition frequency and 125MHz gain bandwidth product. Housed in a 4-pin SOT-223 plastic package with matte tin plating, offering 2W power dissipation and a maximum operating temperature of 150°C. Lead-free and RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.7mm |
| Height | 1.65mm |
| Length | 6.7mm |
| Weight | 0.000282oz |
| Polarity | PNP |
| Frequency | 150MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-223 |
| Max Frequency | 150MHz |
| Current Rating | -1A |
| RoHS Compliant | Yes |
| Contact Plating | Tin, Matte |
| DC Rated Voltage | -80V |
| Package Quantity | 1 |
| Power Dissipation | 2W |
| Number of Elements | 1 |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 150MHz |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 1A |
| Max Power Dissipation | 2W |
| Gain Bandwidth Product | 125MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | -1A |
| Collector Base Voltage (VCBO) | 100V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | -500mV |
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