BCV26

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BCV26 - Onsemi
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Краткое описание: PNP BJT Transistor, 30V, 1.2A, SOT-23, 350mW
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP Darlington bipolar junction transistor in a SOT-23 surface mount package. Features a 30V collector-emitter breakdown voltage, 1.2A maximum collector current, and 10000 minimum hFE. Operates with a 1V collector-emitter saturation voltage and 10V emitter-base voltage. Maximum power dissipation is 350mW, with an operating temperature range of -55°C to 150°C. Transition frequency reaches 220MHz.
RoHS Compliant
Mount Surface Mount
Width 1.3mm
Height 0.93mm
Length 2.92mm
Weight 0.03g
hFE Min 10000
Polarity PNP
Lead Free Lead Free
Packaging Tape and Reel
Package/Case SOT-23
Current Rating -1.2A
RoHS Compliant Yes
Contact Plating Tin, Matte
DC Rated Voltage -30V
Package Quantity 3000
Number of Elements 1
Reach SVHC Compliant No
Transition Frequency 220MHz
Max Breakdown Voltage 30V
Max Collector Current 1.2A
Max Power Dissipation 350mW
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 10V
Collector Base Voltage (VCBO) 40V
Collector-emitter Voltage-Max 1V
Collector Emitter Voltage (VCEO) 30V
Collector Emitter Breakdown Voltage 30V
Collector Emitter Saturation Voltage 1V

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