BCV47TA
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NPN BJT Transistor, 60V, 500mA, SOT-23, 170MHz
Дополнительная информация
NPN bipolar junction transistor in SOT-23 package, featuring a 60V collector-emitter breakdown voltage and 500mA continuous collector current. This silicon transistor offers a 170MHz transition frequency and a maximum power dissipation of 330mW. Designed for surface mounting, it operates across a temperature range of -55°C to 150°C and is lead-free and RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.1mm |
| Length | 3mm |
| Weight | 0.000282oz |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-23 |
| Current Rating | 500mA |
| RoHS Compliant | Yes |
| Contact Plating | Tin, Matte |
| DC Rated Voltage | 60V |
| Package Quantity | 3000 |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 170MHz |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 500mA |
| Max Power Dissipation | 330mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 10V |
| Continuous Collector Current | 500mA |
| Collector Base Voltage (VCBO) | 80V |
| Collector-emitter Voltage-Max | 1V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 1V |
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