BCV49TA
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NPN BJT Transistor, 60V, 500mA, 170MHz, SOT-89
Дополнительная информация
NPN silicon bipolar junction transistor for small signal applications. Features a 60V collector-emitter breakdown voltage and 500mA continuous collector current. Operates with a 170MHz transition frequency and a minimum hFE of 2000. Packaged in a SOT-89 surface-mount case with tin, matte plating, suitable for tape and reel packaging. Rated for a maximum power dissipation of 1W and operates within a temperature range of -65°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 2.5mm |
| Height | 1.5mm |
| Length | 4.5mm |
| Weight | 0.001834oz |
| hFE Min | 2000 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Termination | SMD/SMT |
| Package/Case | SOT-89 |
| Current Rating | 500mA |
| RoHS Compliant | Yes |
| Contact Plating | Tin, Matte |
| DC Rated Voltage | 60V |
| Package Quantity | 1 |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 170MHz |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 500mA |
| Max Power Dissipation | 1W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 10V |
| Continuous Collector Current | 500mA |
| Collector Base Voltage (VCBO) | 80V |
| Collector-emitter Voltage-Max | 1V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 1V |
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