BCW60D
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Краткое описание:
NPN BJT 32V 100mA 125MHz SOT-23 Transistor
Дополнительная информация
NPN bipolar junction transistor in SOT-23 package. Features a 32V collector-emitter breakdown voltage and a maximum collector current of 100mA. Offers a minimum DC current gain (hFE) of 380 and a transition frequency of 125MHz. Maximum power dissipation is 350mW, with a maximum operating temperature of 150°C. Surface mount design, supplied on tape and reel.
| RoHS | Not Compliant |
| Mount | Surface Mount |
| Weight | 0.03g |
| hFE Min | 380 |
| Polarity | NPN |
| Frequency | 125MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-23 |
| Current Rating | 100mA |
| DC Rated Voltage | 32V |
| Package Quantity | 3000 |
| Power Dissipation | 350mW |
| Number of Elements | 1 |
| Transition Frequency | 125MHz |
| Max Collector Current | 100mA |
| Max Power Dissipation | 350mW |
| Gain Bandwidth Product | 125MHz |
| Max Operating Temperature | 150°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 32V |
| Collector-emitter Voltage-Max | 550mV |
| Collector Emitter Voltage (VCEO) | 32V |
| Collector Emitter Breakdown Voltage | 32V |
| Collector Emitter Saturation Voltage | 550mV |
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