BD137G
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NPN BJT Transistor | 60V | 1.5A | TO-225
Дополнительная информация
NPN Power Bipolar Junction Transistor (BJT) in a TO-225 package. Features a maximum collector current of 1.5A and a collector-emitter voltage (VCEO) of 60V. Offers a low collector-emitter saturation voltage of 500mV and a minimum DC current gain (hFE) of 25. Operates across a wide temperature range from -55°C to 150°C with a power dissipation of 1.25W. Packaged in bulk, this RoHS compliant component is supplied with 500 units per box.
| RoHS | Compliant |
| Width | 2.66mm |
| Height | 11.04mm |
| Length | 7.74mm |
| hFE Min | 25 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Package/Case | TO-225-3 |
| Current Rating | 6A |
| RoHS Compliant | Yes |
| Contact Plating | Tin, Matte |
| DC Rated Voltage | 60V |
| Package Quantity | 500 |
| Power Dissipation | 1.25W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Max Collector Current | 1.5A |
| Max Power Dissipation | 1.25W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 60V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 500mV |
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