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PNP BJT Transistor, 45V, 4A, 3MHz, SOT-32
Дополнительная информация
PNP Bipolar Junction Transistor (BJT) designed for power applications. Features a maximum collector current of 4A and a maximum power dissipation of 36W. Offers a collector-emitter breakdown voltage of 45V and a saturation voltage of 200mV. Operates across a wide temperature range from -65°C to 150°C. Packaged in a SOT-32 case with through-hole mounting. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.7mm |
| Height | 10.8mm |
| Length | 7.8mm |
| hFE Min | 30 |
| Polarity | PNP |
| Frequency | 3MHz |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Package/Case | SOT-32 |
| Max Frequency | 3MHz |
| RoHS Compliant | Yes |
| Contact Plating | Tin, Matte |
| Package Quantity | 50 |
| Power Dissipation | 36W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 3MHz |
| Max Collector Current | 4A |
| Max Power Dissipation | 36W |
| Gain Bandwidth Product | 3MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 45V |
| Collector-emitter Voltage-Max | 600mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 200mV |
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