BD677

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BD677 - Stmicroelectronics
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Краткое описание: NPN Darlington Transistor, 60V, 4A, SOT-32
Производитель Stmicroelectronics
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN bipolar junction transistor (BJT) for power applications, featuring a 60V collector-emitter voltage (VCEO) and a 4A maximum collector current. This through-hole mounted component offers a minimum DC current gain (hFE) of 750 and a low collector-emitter saturation voltage of 2.5V. Encased in a SOT-32 package with tin matte plating, it operates across a wide temperature range from -65°C to 150°C and supports a maximum power dissipation of 40W. RoHS compliant and lead-free.
RoHS Compliant
Mount Through Hole
Width 2.7mm
Height 10.8mm
Length 7.8mm
hFE Min 750
Polarity NPN
Lead Free Lead Free
Packaging Rail/Tube
Package/Case SOT-32
Current Rating 4A
RoHS Compliant Yes
Contact Plating Tin, Matte
DC Rated Voltage 60V
Package Quantity 50
Power Dissipation 40W
Number of Elements 1
Reach SVHC Compliant No
Max Collector Current 4A
Max Power Dissipation 40W
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 60V
Collector-emitter Voltage-Max 2.5V
Collector Emitter Voltage (VCEO) 60V
Collector Emitter Breakdown Voltage 60V
Collector Emitter Saturation Voltage 2.5V

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