BD679ASTU

Снят с производства
BD679ASTU - Onsemi
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Краткое описание: NPN Darlington BJT, 100V VCEO, 4A IC, TO-126, Through Hole
Производитель Onsemi
Статус производства Снят с производства (END OF LIFE)

Дополнительная информация

NPN Darlington bipolar power transistor featuring a 100V collector-emitter breakdown voltage and 4A continuous collector current. This through-hole component offers a high minimum DC current gain (hFE) of 750 and a maximum power dissipation of 40W. Packaged in a TO-126 case, it operates within a temperature range of -65°C to 150°C and is RoHS compliant.
RoHS Compliant
Mount Through Hole
Width 3.25mm
Height 11mm
Length 8mm
Weight 0.761g
hFE Min 750
Polarity NPN
Lead Free Lead Free
Packaging Rail/Tube
Package/Case TO-126
Current Rating 4A
RoHS Compliant Yes
DC Rated Voltage 80V
Package Quantity 60
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Max Breakdown Voltage 80V
Max Collector Current 4A
Max Power Dissipation 40W
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 4A
Collector Base Voltage (VCBO) 80V
Collector-emitter Voltage-Max 2.8V
Collector Emitter Voltage (VCEO) 80V
Collector Emitter Breakdown Voltage 100V
Collector Emitter Saturation Voltage 2.8V

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