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PNP BJT Transistor, 80V, 4A, SOT-32
Дополнительная информация
PNP Darlington bipolar junction transistor (BJT) with a maximum collector current of 4A and a collector-emitter breakdown voltage of 80V. Features a low collector-emitter saturation voltage of 2.5V and a minimum DC current gain (hFE) of 750. Housed in a SOT-32 through-hole package with tin, matte contact plating. Operates across a wide temperature range from -65°C to 150°C, with a maximum power dissipation of 40W. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.7mm |
| Height | 10.8mm |
| Length | 7.8mm |
| hFE Min | 750 |
| Polarity | PNP |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Package/Case | SOT-32 |
| Current Rating | -4A |
| RoHS Compliant | Yes |
| Contact Plating | Tin, Matte |
| DC Rated Voltage | -80V |
| Package Quantity | 50 |
| Power Dissipation | 40W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Max Collector Current | 4A |
| Max Power Dissipation | 40W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 80V |
| Collector-emitter Voltage-Max | 2.5V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 2.5V |
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