BD680AS

Снят с производства
BD680AS - Onsemi
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Краткое описание: PNP Darlington BJT, 80V, 4A, TO-126 Power Transistor
Производитель Onsemi
Статус производства Снят с производства (END OF LIFE)

Дополнительная информация

PNP Darlington bipolar power transistor featuring a 80V collector-emitter breakdown voltage and 4A continuous collector current. This through-hole component offers a minimum DC current gain (hFE) of 750 and a maximum power dissipation of 14W. Housed in a TO-126 package with tin matte plating, it operates within a temperature range of -65°C to 150°C and is RoHS compliant.
RoHS Compliant
Mount Through Hole
Weight 0.761g
hFE Min 750
Polarity PNP
Lead Free Lead Free
Packaging Bulk
Termination Through Hole
Package/Case TO-126
Current Rating -4A
RoHS Compliant Yes
Contact Plating Tin, Matte
DC Rated Voltage -80V
Package Quantity 250
Power Dissipation 14W
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Max Breakdown Voltage 80V
Max Collector Current 4A
Max Power Dissipation 14W
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) -5V
Continuous Collector Current -4A
Collector Base Voltage (VCBO) -80V
Collector-emitter Voltage-Max 2.8V
Collector Emitter Voltage (VCEO) 80V
Collector Emitter Breakdown Voltage 80V
Collector Emitter Saturation Voltage 2.8V

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