BD682STU
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Краткое описание:
PNP BJT Darlington Power Transistor, 100V, 4A, TO-126
Дополнительная информация
PNP Darlington Bipolar Power Transistor featuring a 100V collector-emitter voltage and 4A continuous collector current. This through-hole component offers a high minimum DC current gain (hFE) of 750 and a low collector-emitter saturation voltage of 2.5V. Encased in a TO-126 package with tin, matte plating, it operates within a temperature range of -65°C to 150°C and has a maximum power dissipation of 14W. The device is RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 3.25mm |
| Height | 11mm |
| Length | 8mm |
| Weight | 0.761g |
| hFE Min | 750 |
| Polarity | PNP |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Package/Case | TO-126 |
| Current Rating | -4A |
| RoHS Compliant | Yes |
| Contact Plating | Tin, Matte |
| DC Rated Voltage | -100V |
| Package Quantity | 60 |
| Power Dissipation | 14W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 4A |
| Max Power Dissipation | 14W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | -5V |
| Continuous Collector Current | -4A |
| Collector Base Voltage (VCBO) | -100V |
| Collector-emitter Voltage-Max | 2.5V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 2.5V |
