BD809G
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Краткое описание:
NPN BJT 80V 10A TO-220 Power Transistor
Дополнительная информация
High power NPN bipolar junction transistor in a TO-220-3 package. Features a maximum collector current of 10A and a collector-emitter voltage of 80V. Offers a minimum DC current gain (hFE) of 30 and a transition frequency of 1.5MHz. Maximum power dissipation is 90W, with an operating temperature range of -55°C to 150°C. Packaged in a 50-unit tube, this RoHS compliant component has tin, matte contact plating.
| RoHS | Compliant |
| Width | 4.82mm |
| Height | 15.75mm |
| Length | 10.28mm |
| hFE Min | 30 |
| Polarity | NPN |
| Frequency | 1.5MHz |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Package/Case | TO-220-3 |
| Max Frequency | 1MHz |
| Current Rating | 10A |
| RoHS Compliant | Yes |
| Contact Plating | Tin, Matte |
| DC Rated Voltage | 80V |
| Package Quantity | 50 |
| Power Dissipation | 90W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 1.5MHz |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 10A |
| Max Power Dissipation | 90W |
| Gain Bandwidth Product | 1.5MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 80V |
| Collector-emitter Voltage-Max | 1.1V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 1.1V |
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