BDW93CFP

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BDW93CFP - Stmicroelectronics
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Краткое описание: NPN Darlington Transistor, 100V, 12A, TO-220
Производитель Stmicroelectronics
Статус производства Производится (ACTIVE)

Дополнительная информация

Complementary silicon power Darlington transistors designed for high current applications. Featuring a 100V collector-emitter voltage (VCEO) and a maximum collector current of 12A, these NPN transistors offer a maximum power dissipation of 33W. The TO-220-3 package supports both through-hole and surface mount configurations, with a minimum hFE of 100 and a low collector-emitter saturation voltage. Operating across a wide temperature range from -65°C to 150°C, these RoHS compliant components are ideal for power switching and amplification circuits.
RoHS Compliant
Mount Surface Mount, Through Hole
Width 4.6mm
Height 9.3mm
Length 10.4mm
Weight 0.08113oz
hFE Min 100
Polarity NPN
Lead Free Lead Free
Packaging Rail/Tube
Package/Case TO-220-3
Current Rating 12A
RoHS Compliant Yes
Contact Plating Tin, Matte
DC Rated Voltage 100V
Package Quantity 50
Power Dissipation 33W
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Max Breakdown Voltage 100V
Max Collector Current 12A
Max Power Dissipation 33W
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) 2.5V
Collector Base Voltage (VCBO) 100V
Collector-emitter Voltage-Max 3V
Collector Emitter Voltage (VCEO) 100V
Collector Emitter Breakdown Voltage 350V
Collector Emitter Saturation Voltage 2V

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