BDX33C

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BDX33C - Stmicroelectronics
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Краткое описание: NPN Darlington Transistor 100V 10A TO-220
Производитель Stmicroelectronics
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN Darlington bipolar junction transistor (BJT) in a TO-220 package. Features a maximum collector current of 10A and a collector-emitter breakdown voltage of 100V. Offers a minimum hFE of 750 and a maximum power dissipation of 70W. Designed for through-hole mounting with tin, matte contact plating. Operates within a temperature range of -65°C to 150°C and is RoHS compliant.
RoHS Compliant
Mount Through Hole
Width 4.6mm
Height 9.15mm
Length 10.4mm
hFE Min 750
Polarity NPN
Lead Free Lead Free
Packaging Rail/Tube
Package/Case TO-220
RoHS Compliant Yes
Contact Plating Tin, Matte
Package Quantity 50
Power Dissipation 70W
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Max Collector Current 10A
Max Power Dissipation 70W
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Collector Base Voltage (VCBO) 100V
Collector-emitter Voltage-Max 2.5V
Collector Emitter Voltage (VCEO) 100V
Collector Emitter Breakdown Voltage 100V
Collector Emitter Saturation Voltage 2.5V

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