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Краткое описание:
NPN Phototransistor 70V 50mA 850nm Through Hole
Дополнительная информация
NPN phototransistor chip for optical sensing applications. Features 70V collector-emitter breakdown voltage and 50mA continuous collector current. Operates with a 300mV collector-emitter saturation voltage and 100mW maximum power dissipation. This through-hole component has a 25° viewing angle and a 850nm wavelength sensitivity, housed in a clear, domed T-1 package.
| RoHS | Compliant |
| Mount | Through Hole |
| Polarity | NPN |
| Packaging | Bulk |
| Lens Color | Clear |
| Lens Style | Domed, TRANSPARENT |
| Wavelength | 850nm |
| Orientation | Top View |
| Package/Case | T |
| Viewing Angle | 25° |
| Current Rating | 50mA |
| RoHS Compliant | Yes |
| Package Material | SILICON |
| Package Quantity | 5000 |
| Power Consumption | 100mW |
| Power Dissipation | 100mW |
| Number of Elements | 1 |
| Reach SVHC Compliant | Unknown |
| Max Breakdown Voltage | 70V |
| Max Collector Current | 100mA |
| Max Power Dissipation | 100mW |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -40°C |
| Collector-emitter Voltage-Max | 70V |
| Collector Emitter Voltage (VCEO) | 70V |
| Collector Emitter Breakdown Voltage | 70V |
| Collector Emitter Saturation Voltage | 300mV |
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