BPX 83
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Краткое описание:
Phototransistor NPN 35V 850nm 3-Element Array SDIP
Дополнительная информация
NPN phototransistor array featuring a 36° viewing angle and 850nm wavelength. This through-hole component offers a collector-emitter breakdown voltage of 35V and a maximum collector current of 50mA. Housed in a clear, domed SDIP package with a 7.4mm length, 3.6mm height, and 2.1mm width, it operates within a temperature range of -40°C to 80°C with a power dissipation of 90mW. Includes three elements and is RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.1mm |
| Height | 3.6mm |
| Length | 7.4mm |
| Polarity | NPN |
| Fall Time | 6us |
| Lens Color | Clear |
| Lens Style | TRANSPARENT, Domed |
| Wavelength | 850nm |
| Orientation | Top View |
| Package/Case | SDIP |
| Viewing Angle | 36° |
| RoHS Compliant | Yes |
| Package Material | SILICON |
| Package Quantity | 250 |
| Power Dissipation | 90mW |
| Number of Elements | 3 |
| Radiation Hardening | No |
| Max Breakdown Voltage | 35V |
| Max Collector Current | 50mA |
| Max Power Dissipation | 90mW |
| Max Operating Temperature | 80°C |
| Min Operating Temperature | -40°C |
| Collector-emitter Voltage-Max | 35V |
| Collector Emitter Voltage (VCEO) | 35V |
| Collector Emitter Breakdown Voltage | 35V |
