BST15TA
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Краткое описание:
PNP BJT Transistor, 200V V(BR)CEO, 500mA I(C), 15MHz fT, TO-243AA
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a maximum collector current of 500mA and a collector-emitter breakdown voltage of 30V, with a maximum collector base voltage of 200V. Operates with a transition frequency of 15MHz and a maximum power dissipation of 1W. Packaged in a TO-243AA surface-mount case, this component is designed for a wide operating temperature range from -65°C to 150°C.
| RoHS | Not Compliant |
| Mount | Surface Mount |
| Width | 2.6mm |
| Height | 1.6mm |
| Length | 4.6mm |
| Weight | 0.004603oz |
| Polarity | PNP |
| Lead Free | Contains Lead |
| Packaging | Cut Tape |
| Package/Case | TO-243AA |
| Current Rating | -500mA |
| RoHS Compliant | No |
| DC Rated Voltage | -200V |
| Package Quantity | 1 |
| Transition Frequency | 15MHz |
| Max Breakdown Voltage | 200V |
| Max Collector Current | 500mA |
| Max Power Dissipation | 1W |
| Gain Bandwidth Product | 15MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 4V |
| Collector Base Voltage (VCBO) | 200V |
| Collector-emitter Voltage-Max | 2V |
| Collector Emitter Breakdown Voltage | 30V |
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