BUTW92

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BUTW92 - Stmicroelectronics
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Краткое описание: NPN BJT Transistor, 250V VCEO, 15A IC, TO-247
Производитель Stmicroelectronics
Статус производства Производится (ACTIVE)

Дополнительная информация

High current NPN silicon transistor in a TO-247 package. Features a 250V collector-emitter breakdown voltage and a 15A continuous current rating, with a maximum collector current of 45A. Offers a low collector-emitter saturation voltage of 800mV and a maximum power dissipation of 180W. Operates across a wide temperature range from -65°C to 150°C. This through-hole mounted component is RoHS compliant.
RoHS Compliant
Mount Through Hole
Width 5.3mm
Height 20.3mm
Length 15.9mm
hFE Min 9
Polarity NPN
Lead Free Lead Free
Packaging Rail/Tube
Package/Case TO-247
Current Rating 15A
RoHS Compliant Yes
DC Rated Voltage 250V
Package Quantity 30
Power Dissipation 180W
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Max Collector Current 45A
Max Power Dissipation 180W
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) 7V
Collector Base Voltage (VCBO) 500V
Collector-emitter Voltage-Max 1V
Collector Emitter Voltage (VCEO) 250V
Collector Emitter Breakdown Voltage 250V
Collector Emitter Saturation Voltage 800mV

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