D44H11G
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Краткое описание:
NPN BJT 10A 80V TO-220 Power Transistor
Дополнительная информация
NPN bipolar junction transistor (BJT) with a maximum collector current of 10A and a collector-emitter voltage of 80V. Features a 50MHz transition frequency and a minimum DC current gain (hFE) of 60. Packaged in a TO-220-3 standard configuration, this component offers a maximum power dissipation of 2W and operates within a temperature range of -55°C to 150°C. RoHS compliant with tin, matte contact plating.
| RoHS | Compliant |
| Width | 4.82mm |
| Height | 9.28mm |
| Length | 10.28mm |
| hFE Min | 60 |
| Polarity | NPN |
| Frequency | 50MHz |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Package/Case | TO-220-3 |
| Max Frequency | 50MHz |
| Current Rating | 10A |
| RoHS Compliant | Yes |
| Contact Plating | Tin, Matte |
| DC Rated Voltage | 80V |
| Package Quantity | 50 |
| Power Dissipation | 2W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 50MHz |
| Max Collector Current | 10A |
| Max Power Dissipation | 2W |
| Gain Bandwidth Product | 50MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 80V |
| Collector-emitter Voltage-Max | 1V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 1V |
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