D45H11
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PNP BJT Transistor, 80V, 10A, 50W, TO-220
Дополнительная информация
PNP Silicon Power Transistor, TO-220 package, featuring a maximum collector current of 10A and a collector-emitter voltage (VCEO) of 80V. This through-hole component offers a maximum power dissipation of 50W and a minimum hFE of 60. Operating temperature range spans from -65°C to 150°C, with a collector-emitter saturation voltage of 1V. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.6mm |
| Height | 9.15mm |
| Length | 10.4mm |
| hFE Min | 60 |
| Polarity | PNP, NPN |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Package/Case | TO-220 |
| Current Rating | -10A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -80V |
| Package Quantity | 1000 |
| Power Dissipation | 50W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Max Collector Current | 10A |
| Max Power Dissipation | 50W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 80V |
| Collector-emitter Voltage-Max | 1V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 1V |
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