D45H11FP

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D45H11FP - Stmicroelectronics
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Краткое описание: PNP BJT Transistor 80V 10A TO-220FP Single
Производитель Stmicroelectronics
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP Bipolar Junction Transistor (BJT) for through-hole mounting. Features a maximum collector-emitter voltage of 80V and a maximum DC collector current of 10A. Offers a maximum power dissipation of 36000mW and a minimum DC current gain of 60 at 2A, 1V. Encased in a TO-220FP package with 3 pins and a tab, measuring 10.4mm (L) x 4.6mm (W) x 16.4mm (H). Operates within a temperature range of -55°C to 150°C.
PCB 3
Tab Tab
ECCN EAR99
PPAP No
Type PNP
EU RoHS Yes with Exemption
Category Bipolar Power
Mounting Through Hole
Cage Code SCR76
Pin Count 3
Automotive No
Lead Shape Through Hole
Schedule B 8541290080
Package/Case TO-220FP
AEC Qualified No
Configuration Single
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 2.7(Max)
Package Material Plastic
Basic Package Type Through Hole
Package Weight (g) 2.04
Package Width (mm) 4.6(Max)
Package Description Transistor Outline Package Fullpak
Package Family Name TO-220
Package Height (mm) 16.4(Max)
Package Length (mm) 10.4(Max)
Radiation Hardening No
Minimum DC Current Gain 60@2A@1V|40@4A@1V
Seated Plane Height (mm) 20(Max)
Max Operating Temperature 150°C
Maximum Power Dissipation 36000mW
Min Operating Temperature -55°C
Number of Elements per Chip 1
Maximum DC Collector Current 10A
Maximum Emitter Base Voltage 5V
Maximum Collector-Emitter Voltage 80V

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