DMN2004DMK-7
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2-Ch N-Ch JFET, 20V, 540mA ID, SOT-26, SM
Дополнительная информация
N-Channel Silicon Metal-oxide Semiconductor FET, a 2-element JFET with a 20V Drain to Source Voltage (Vdss) and 540mA Continuous Drain Current (ID). Features 550mR Drain to Source Resistance (Rds On Max) and 8V Gate to Source Voltage (Vgs). This surface mount component, housed in a SOT-26 package, offers a max power dissipation of 225mW and operates within a temperature range of -65°C to 150°C. It is RoHS and REACH SVHC compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.6mm |
| Height | 1.1mm |
| Length | 3mm |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 550mR |
| Package/Case | SOT-26 |
| Current Rating | 540mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 20V |
| Package Quantity | 3000 |
| Input Capacitance | 150pF |
| Number of Channels | 2 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 225mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Drain to Source Resistance | 550mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 540mA |
| Drain to Source Voltage (Vdss) | 20V |
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