DMN2004K-7
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N-Channel JFET, 20V, 630mA ID, SOT-23
Дополнительная информация
N-channel silicon Metal-oxide Semiconductor FET (MOSFET) for surface mounting in a SOT-23 package. Features a 20V Drain-Source Voltage (Vdss), 630mA Continuous Drain Current (ID), and a maximum Drain-Source On Resistance (Rds On) of 550mR. Operates within a temperature range of -65°C to 150°C with a maximum power dissipation of 350mW. Includes a nominal Gate-Source Voltage (Vgs) of 1.6V and input capacitance of 150pF.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.3mm |
| Height | 1mm |
| Length | 2.9mm |
| Weight | 0.000282oz |
| Polarity | N-CHANNEL |
| Fall Time | 37.6ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 550mR |
| Nominal Vgs | 1.6V |
| Package/Case | SOT-23 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 150pF |
| Power Dissipation | 350mW |
| Threshold Voltage | 1.6V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 5.7ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 59.4ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 350mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Drain to Source Resistance | 550mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 630mA |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 550mR |
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