DMN2005K-7
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Краткое описание:
N-Channel JFET, 20V, 300mA, 1.7 Ohm, SOT-23-3
Дополнительная информация
N-channel, silicon, metal-oxide semiconductor field-effect transistor (MOSFET) designed for surface mount applications. Features a 20V drain-to-source voltage (Vdss) and a continuous drain current (ID) of 300mA. Offers a low drain-to-source resistance (Rds On) of 1.7 Ohms. Packaged in an ultra-small, 3-pin plastic SOT-23 package, suitable for tape and reel deployment. Operates within a temperature range of -65°C to 150°C with a maximum power dissipation of 350mW.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.3mm |
| Height | 1mm |
| Length | 2.9mm |
| Weight | 0.000282oz |
| Polarity | N-CHANNEL |
| Packaging | Tape and Reel |
| Rds On Max | 1.7R |
| Package/Case | SOT-23-3 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Power Dissipation | 350mW |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 350mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Drain to Source Resistance | 1.7R |
| Gate to Source Voltage (Vgs) | 10V |
| Continuous Drain Current (ID) | 300mA |
| Drain to Source Voltage (Vdss) | 20V |
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