DMP2104LP-7
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Краткое описание:
P-Channel JFET, 20V, 1.5A ID, 150mR Rds(on), DFN
Дополнительная информация
P-channel, silicon, metal-oxide semiconductor FET with a 20V drain-source voltage (Vdss) and 1.5A continuous drain current (ID). Features a low drain-source on-resistance (Rds On) of 150mR, a gate-to-source voltage (Vgs) of 12V, and a threshold voltage of -1V. This surface mount transistor offers 320pF input capacitance and 500mW power dissipation, operating from -55°C to 150°C. Packaged in a compact 1.4mm x 1.1mm x 0.48mm DFN package, it is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.1mm |
| Height | 0.48mm |
| Length | 1.4mm |
| Polarity | P-CHANNEL |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 150mR |
| Package/Case | DFN |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 320pF |
| Power Dissipation | 500mW |
| Threshold Voltage | -1V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 500mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 150mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 1.5A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 240mR |
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