DMP2240UDM-7
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Краткое описание:
P-Channel JFET, 2A ID, -20V Vdss, 150mR Rds(on), SOT-26
Дополнительная информация
P-channel, silicon, Metal-oxide Semiconductor FET with two elements, designed for surface mounting in a SOT-26 package. Features a continuous drain current of 2A, drain-to-source voltage of -20V, and a low drain-to-source resistance of 150mR. Operates across a wide temperature range from -65°C to 150°C with a maximum power dissipation of 600mW. Includes fast switching characteristics with turn-on delay time of 11.51ns and fall time of 12.09ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.6mm |
| Height | 1.1mm |
| Length | 3mm |
| Polarity | P-CHANNEL |
| Fall Time | 12.09ns |
| Packaging | Tape and Reel |
| Rds On Max | 150mR |
| Package/Case | SOT-26 |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 320pF |
| Threshold Voltage | -1V |
| Number of Channels | 2 |
| Turn-On Delay Time | 11.51ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 55.34ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 600mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Drain to Source Resistance | 150mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 2A |
| Drain to Source Voltage (Vdss) | -20V |
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