DPLS160-7

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DPLS160-7 - Diodes
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Краткое описание: PNP BJT Transistor, 60V, 1A, 220MHz, SOT-23
Производитель Diodes
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP Bipolar Junction Transistor (BJT) for small signal applications. Features a 60V collector-emitter breakdown voltage and 1A maximum collector current. Operates with a 220MHz gain bandwidth product and transition frequency of 150MHz. Packaged in a 3-lead SOT-23 surface mount plastic package, this RoHS compliant silicon transistor offers a wide operating temperature range from -55°C to 150°C.
RoHS Compliant
Mount Surface Mount
Width 1.4mm
Height 1.1mm
Length 3mm
Weight 0.000282oz
Polarity PNP
Lead Free Lead Free
Packaging Tape and Reel
Package/Case SOT-23
Max Frequency 220MHz
RoHS Compliant Yes
Package Quantity 3000
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 150MHz
Max Breakdown Voltage 60V
Max Collector Current 1A
Max Power Dissipation 300mW
Gain Bandwidth Product 220MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) -5V
Collector Base Voltage (VCBO) -80V
Collector-emitter Voltage-Max 330mV
Collector Emitter Breakdown Voltage 60V
Collector Emitter Saturation Voltage -330mV

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