EMX1T2R
Производится
Увеличить
Краткое описание:
NPN BJT Transistor, 50V, 150mA, 180MHz, 2-Element, SMT
Дополнительная информация
NPN bipolar junction transistor for small signal applications. Features a 50V collector-emitter breakdown voltage and 150mA continuous collector current. Operates with a 180MHz gain bandwidth product and a minimum hFE of 120. This surface mount silicon transistor is housed in an EMT6 package and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| hFE Min | 120 |
| Polarity | NPN |
| Frequency | 180MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Current Rating | 150mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 50V |
| Package Quantity | 8000 |
| Power Dissipation | 150mW |
| Number of Elements | 2 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 180MHz |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 150mA |
| Max Power Dissipation | 150mW |
| Gain Bandwidth Product | 180MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 7V |
| Continuous Collector Current | 150mA |
| Collector Base Voltage (VCBO) | 60V |
| Collector-emitter Voltage-Max | 400mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
