FCX458TA
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Краткое описание:
NPN BJT Transistor, 400V VCEO, 225mA IC, 50MHz, SOT-89
Дополнительная информация
NPN bipolar junction transistor in a SOT-89 package, featuring a 400V collector-emitter breakdown voltage and 225mA continuous collector current. This silicon transistor offers a 50MHz transition frequency and a maximum power dissipation of 1W. Designed for surface mounting, it operates within a temperature range of -65°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 2.5mm |
| Height | 1.5mm |
| Length | 4.5mm |
| Weight | 0.001834oz |
| Polarity | NPN |
| Frequency | 50MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-89 |
| Max Frequency | 50MHz |
| Current Rating | 225mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 400V |
| Package Quantity | 1000 |
| Power Dissipation | 1W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 50MHz |
| Max Breakdown Voltage | 400V |
| Max Collector Current | 225mA |
| Max Power Dissipation | 1W |
| Gain Bandwidth Product | 50MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | 225mA |
| Collector Base Voltage (VCBO) | 400V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Voltage (VCEO) | 400V |
| Collector Emitter Breakdown Voltage | 400V |
| Collector Emitter Saturation Voltage | 500mV |
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