FCX596TA
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PNP BJT Transistor, 200V VCEO, 300mA IC, 150MHz, SOT-89
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 200V Collector Emitter Breakdown Voltage (VCEO) and a 300mA Continuous Collector Current. Operates with a 150MHz Gain Bandwidth Product and a maximum power dissipation of 1W. Packaged in a SOT-89 surface mount case, this lead-free component offers a wide operating temperature range from -65°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 2.5mm |
| Height | 1.5mm |
| Length | 4.5mm |
| Weight | 0.001834oz |
| Polarity | PNP |
| Frequency | 150MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-89 |
| Max Frequency | 150MHz |
| Current Rating | -300mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | -200V |
| Package Quantity | 1 |
| Power Dissipation | 1W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 150MHz |
| Max Breakdown Voltage | 200V |
| Max Collector Current | 300mA |
| Max Power Dissipation | 1W |
| Gain Bandwidth Product | 150MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | -5V |
| Continuous Collector Current | -300mA |
| Collector Base Voltage (VCBO) | 220V |
| Collector-emitter Voltage-Max | 350mV |
| Collector Emitter Voltage (VCEO) | 200V |
| Collector Emitter Breakdown Voltage | 200V |
| Collector Emitter Saturation Voltage | -350mV |
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