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NPN BJT Transistor, 400V, 500mA, 50MHz, SOT-89
Дополнительная информация
NPN bipolar junction transistor for small signal applications. Features a 400V collector-emitter breakdown voltage and 500mA continuous collector current. Operates with a 50MHz transition frequency and a maximum power dissipation of 1W. Packaged in a SOT-89 surface-mount case, this silicon transistor is RoHS compliant and suitable for a wide temperature range from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 2.5mm |
| Height | 1.5mm |
| Length | 4.5mm |
| Weight | 0.001834oz |
| Polarity | NPN |
| Frequency | 50MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-89 |
| Max Frequency | 50MHz |
| RoHS Compliant | Yes |
| DC Rated Voltage | 400V |
| Package Quantity | 1000 |
| Power Dissipation | 1W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 50MHz |
| Max Breakdown Voltage | 400V |
| Max Collector Current | 500mA |
| Max Power Dissipation | 1W |
| Gain Bandwidth Product | 50MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | 500mA |
| Collector Base Voltage (VCBO) | 400V |
| Collector-emitter Voltage-Max | 200mV |
| Collector Emitter Voltage (VCEO) | 400V |
| Collector Emitter Breakdown Voltage | 400V |
| Collector Emitter Saturation Voltage | 200mV |
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