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Краткое описание:
N-Channel JFET 200V 1.1A 725mR SOT-23-6
Дополнительная информация
N-Channel PowerTrench® MOSFET, single element configuration, offers a 200V drain-source breakdown voltage and 1.1A continuous drain current. Features a low 725mΩ drain-source on-resistance and 6ns turn-on delay time. Designed for surface mounting in a SOT-23-6 package, this RoHS compliant component operates from -55°C to 150°C with a maximum power dissipation of 1.6W.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.7mm |
| Height | 1mm |
| Length | 3mm |
| Series | PowerTrench® |
| Weight | 0.036g |
| Polarity | N-CHANNEL |
| Fall Time | 6ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 725mR |
| Package/Case | SOT-23-6 |
| Current Rating | 1.1A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 200V |
| Package Quantity | 1 |
| Input Capacitance | 234pF |
| Power Dissipation | 1.6W |
| Threshold Voltage | 4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 6ns |
| Turn-Off Delay Time | 17ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 800mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 725mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 1.1A |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 725MR |
| Drain to Source Breakdown Voltage | 200V |
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