FDC5612
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Краткое описание:
N-Channel JFET 60V 4.3A 55mR SOT-23-6
Дополнительная информация
N-Channel PowerTrench® MOSFET, 60V Drain to Source Breakdown Voltage, 4.3A Continuous Drain Current, and 55mΩ Max Drain-Source On Resistance. This single-element transistor features a 2.2V Threshold Voltage, 650pF Input Capacitance, and 8ns Fall Time. Packaged in a SOT-23-6 surface mount configuration, it operates from -55°C to 150°C with a 1.6W Max Power Dissipation. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.7mm |
| Height | 1mm |
| Length | 3mm |
| Series | PowerTrench® |
| Weight | 0.036g |
| Polarity | N-CHANNEL |
| Fall Time | 8ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 55mR |
| Package/Case | SOT-23-6 |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 1 |
| Input Capacitance | 650pF |
| Power Dissipation | 1.6W |
| Threshold Voltage | 2.2V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 11ns |
| Dual Supply Voltage | 60V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 19ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 1.6W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 55mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 4.3A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 55mR |
| Drain to Source Breakdown Voltage | 60V |
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