FDC602P
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Краткое описание:
P-Channel MOSFET, -20V, -5.5A, 35mR, SOT-23-6, SMD
Дополнительная информация
P-Channel MOSFET, 2.5V Specified, featuring a -20V Drain to Source Breakdown Voltage and a continuous drain current of 5.5A. This surface mount device offers a low Drain-source On Resistance of 35mR at a Gate to Source Voltage of -900mV. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 1.6W. The component is supplied in a SOT-23-6 package, with 3000 units per tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.7mm |
| Height | 1mm |
| Length | 3mm |
| Series | PowerTrench® |
| Current | 55A |
| Voltage | 20V |
| Polarity | P-CHANNEL |
| Fall Time | 11ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 35mR |
| Nominal Vgs | -900mV |
| Termination | SMD/SMT |
| Package/Case | SOT-23-6 |
| Current Rating | -5.5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -20V |
| Package Quantity | 3000 |
| Input Capacitance | 1.456nF |
| Power Dissipation | 1.6W |
| Threshold Voltage | -900mV |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 15ns |
| Dual Supply Voltage | -20V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 57ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 1.6W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 35mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 5.5A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 35MR |
| Drain to Source Breakdown Voltage | -20V |
