FDC6301N
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Краткое описание:
Dual N-Ch JFET 25V 0.22A 4R SOT-23-6
Дополнительная информация
Dual N-Channel JFET, surface mount, SOT-23-6 package. Features 25V drain-source breakdown voltage, 220mA continuous drain current, and 4 Ohm drain-source on-resistance. Operates with a gate-source voltage of 8V and offers fast switching with 4.5ns fall time. Rated for 900mW power dissipation and a temperature range of -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.7mm |
| Height | 1mm |
| Length | 3mm |
| Weight | 0.036g |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 4.5ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 4R |
| Nominal Vgs | 850mV |
| Termination | SMD/SMT |
| Package/Case | SOT-23-6 |
| Current Rating | 220mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 25V |
| Package Quantity | 3000 |
| Input Capacitance | 9.5pF |
| Power Dissipation | 900mW |
| Threshold Voltage | 850mV |
| Number of Elements | 2 |
| Turn-On Delay Time | 5ns |
| Dual Supply Voltage | 25V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 4ns |
| Reach SVHC Compliant | No |
| Element Configuration | Dual |
| Max Power Dissipation | 900mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3.8R |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 220mA |
| Drain to Source Voltage (Vdss) | 25V |
| Drain-source On Resistance-Max | 4R |
| Drain to Source Breakdown Voltage | 25V |
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