FDC6306P
Производится
Увеличить
Краткое описание:
Dual P-Channel MOSFET, -20V, -1.9A, 170mR, SOT-23-6
Дополнительная информация
Dual P-Channel MOSFET, 2.5V specified, featuring -20V Drain to Source Breakdown Voltage and 170mΩ Drain-Source On Resistance. This surface mount component offers a continuous drain current of 1.9A and a maximum power dissipation of 960mW. The dual element configuration is housed in a SOT-23-6 package, with a typical turn-on delay of 6ns and fall time of 9ns. RoHS compliant and lead-free, it operates within a -55°C to 150°C temperature range.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.7mm |
| Height | 1mm |
| Length | 3mm |
| Series | PowerTrench® |
| Weight | 0.036g |
| Polarity | P-CHANNEL |
| Fall Time | 9ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 170mR |
| Nominal Vgs | -900mV |
| Package/Case | SOT-23-6 |
| Current Rating | -1.9A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -20V |
| Package Quantity | 3000 |
| Input Capacitance | 441pF |
| Power Dissipation | 960mW |
| Threshold Voltage | -900mV |
| Number of Elements | 2 |
| Turn-On Delay Time | 6ns |
| Dual Supply Voltage | -20V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 14ns |
| Reach SVHC Compliant | No |
| Element Configuration | Dual |
| Max Power Dissipation | 960mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 170mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 1.9A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 170mR |
| Drain to Source Breakdown Voltage | -20V |
