FDC6327C
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Dual N/P-Ch MOSFET, 20V, 1.9A, 80mR, SOT-23-6
Дополнительная информация
Dual N & P-Channel MOSFET, 20V Vdss, 1.9A ID, 69mR Rds On Max. This surface mount device features a SOT-23-6 package, 960mW power dissipation, and 325pF input capacitance. Operating temperature range is -55°C to 150°C. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.7mm |
| Height | 1mm |
| Length | 3mm |
| Series | PowerTrench® |
| Weight | 0.036g |
| FET Type | N and P-Channel |
| Polarity | P-CHANNEL |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 80mR |
| Nominal Vgs | 900mV |
| Termination | SMD/SMT |
| Package/Case | SOT-23-6 |
| Current Rating | 2.7A |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 325pF |
| Power Dissipation | 960mW |
| Threshold Voltage | 900mV |
| Number of Elements | 2 |
| Radiation Hardening | No |
| Turn-Off Delay Time | 14ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 960mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 69mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 1.9A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 80MR |
| Drain to Source Breakdown Voltage | 20V |
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