FDC638P

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FDC638P - Onsemi
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Краткое описание: P-Channel MOSFET, -20V, -4.5A, 48mR, SOT-23-6
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

P-Channel PowerTrench® MOSFET, SOT-23-6 package, offering -20V drain-source breakdown voltage and 4.5A continuous drain current. Features 48mΩ maximum drain-source on-resistance at a nominal Vgs of -800mV. Operates with a gate-to-source voltage up to 8V, exhibiting a 9ns turn-on delay and 33ns turn-off delay. This surface-mount component has a maximum power dissipation of 1.6W and a maximum operating temperature of 150°C.
RoHS Compliant
Mount Surface Mount
Width 1.7mm
Height 1mm
Length 3mm
Series PowerTrench®
Weight 0.036g
Polarity P-CHANNEL
Fall Time 9ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 48mR
Nominal Vgs -800mV
Package/Case SOT-23-6
RoHS Compliant Yes
DC Rated Voltage -20V
Package Quantity 1
Input Capacitance 1.16nF
Power Dissipation 1.6W
Threshold Voltage -800mV
Number of Channels 1
Number of Elements 1
Turn-On Delay Time 9ns
Dual Supply Voltage -20V
Turn-Off Delay Time 33ns
Reach SVHC Compliant No
Element Configuration Single
Max Power Dissipation 1.6W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 48mR
Gate to Source Voltage (Vgs) 8V
Continuous Drain Current (ID) 4.5A
Drain to Source Voltage (Vdss) 20V
Drain-source On Resistance-Max 48MR
Drain to Source Breakdown Voltage -20V

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