FDFMA3N109

Производится
FDFMA3N109 - Onsemi
Увеличить
Краткое описание: N-Channel MOSFET & Schottky Diode, 30V, 2.9A, 123mR, SOT-363
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

N-Channel PowerTrench® MOSFET with integrated Schottky diode, featuring a 30V drain-source breakdown voltage and a continuous drain current of 2.9A. This surface-mount component offers a low drain-source on-resistance of 123mΩ at a gate-source voltage of 12V. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 1.5W. The SOT-363 package is supplied on a 3000-piece tape and reel.
RoHS Compliant
Mount Surface Mount
Width 2mm
Height 0.75mm
Length 2mm
Series PowerTrench®
Weight 0.06g
Polarity N-CHANNEL
Fall Time 8ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 123mR
Package/Case SOT-363
Current Rating 2.9A
RoHS Compliant Yes
DC Rated Voltage 30V
Package Quantity 1
Input Capacitance 220pF
Power Dissipation 1.5W
Threshold Voltage 1V
Turn-On Delay Time 6ns
Radiation Hardening No
Turn-Off Delay Time 12ns
Reach SVHC Compliant No
Element Configuration Single
Max Power Dissipation 1.5W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 123mR
Gate to Source Voltage (Vgs) 12V
Continuous Drain Current (ID) 2.9A
Drain to Source Voltage (Vdss) 30V
Drain-source On Resistance-Max 123MR
Drain to Source Breakdown Voltage 30V