FDG6306P
Производится
Увеличить
Краткое описание:
P-Channel Dual JFET, -20V, -600mA, 420mR, SC Package
Дополнительная информация
P-Channel MOSFET, dual element configuration, featuring a -20V drain-source breakdown voltage and -0.6A continuous drain current. Offers a low 420mΩ drain-source resistance at Vgs=12V and a threshold voltage of -1.2V. Designed for surface mounting in a compact SC package, this component boasts fast switching speeds with turn-on delay of 5.5ns and fall time of 14ns. Operating temperature range from -55°C to 150°C, with 300mW maximum power dissipation. Packaged on a 3000-piece tape and reel, this RoHS compliant device is lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.25mm |
| Height | 1mm |
| Length | 2mm |
| Series | PowerTrench® |
| Weight | 0.028g |
| Polarity | P-CHANNEL |
| Fall Time | 14ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 420mR |
| Package/Case | SC |
| Current Rating | -600mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | -20V |
| Package Quantity | 3000 |
| Input Capacitance | 114pF |
| Power Dissipation | 300mW |
| Threshold Voltage | -1.2V |
| Number of Elements | 2 |
| Turn-On Delay Time | 5.5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 6ns |
| Reach SVHC Compliant | No |
| Element Configuration | Dual |
| Max Power Dissipation | 300mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 420mR |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 600mA |
| Drain to Source Voltage (Vdss) | 20V |
| Drain to Source Breakdown Voltage | -20V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
