FDG6321C
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Dual N/P-Ch JFET, 25V, 450mR, 300mA, SC, Tape & Reel
Дополнительная информация
Dual N & P Channel JFET, surface mount, 25V drain-source breakdown voltage, 450mΩ drain-source on-resistance, 410mA continuous drain current. Features 8ns fall time and 55ns turn-off delay. Operates from -55°C to 150°C, with 300mW max power dissipation. Packaged in tape and reel, 3000 units per reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Height | 1.1mm |
| Weight | 0.028g |
| FET Type | N and P-Channel |
| Polarity | P-CHANNEL |
| Fall Time | 8ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 450mR |
| Package/Case | SC |
| Current Rating | 500mA |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 50pF |
| Power Dissipation | 300mW |
| Threshold Voltage | 800mV |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Radiation Hardening | No |
| Turn-Off Delay Time | 55ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 300mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 450mR |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 410mA |
| Drain to Source Voltage (Vdss) | 25V |
| Drain-source On Resistance-Max | 450mR |
| Drain to Source Breakdown Voltage | 25V |
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