FDMA1029PZ

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FDMA1029PZ - Onsemi
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Краткое описание: Dual P-Ch MOSFET -20V, -3.1A, 95mΩ, SMD
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

Dual P-Channel MOSFET featuring a -20V drain-source breakdown voltage and a continuous drain current of 3.1A. This surface-mount component offers a low Rds(on) of 95mΩ at a nominal Vgs of -1V, with a maximum power dissipation of 1.4W. The dual element configuration includes a fall time of 11ns and turn-off delay of 37ns, suitable for applications requiring efficient switching. Packaged in tape and reel, this RoHS compliant device operates from -55°C to 150°C.
RoHS Compliant
Mount Surface Mount
Width 2mm
Height 0.75mm
Length 2mm
Series PowerTrench®
Weight 0.04g
Polarity P-CHANNEL
Fall Time 11ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 95mR
Nominal Vgs -1V
Termination SMD/SMT
Current Rating -3.1A
RoHS Compliant Yes
DC Rated Voltage -20V
Package Quantity 3000
Input Capacitance 540pF
Power Dissipation 1.4W
Threshold Voltage 1V
Number of Elements 2
Turn-On Delay Time 13ns
Dual Supply Voltage -20V
Radiation Hardening No
Turn-Off Delay Time 37ns
Reach SVHC Compliant No
Element Configuration Dual
Max Power Dissipation 1.4W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 60mR
Gate to Source Voltage (Vgs) 12V
Continuous Drain Current (ID) 3.1A
Drain to Source Voltage (Vdss) 20V
Drain to Source Breakdown Voltage -20V

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